| PART |
Description |
Maker |
| SCH2602 |
350 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device
|
SANYO SEMICONDUCTOR CO LTD
Sanyo Semicon Device
|
| VP0540 VP0535 VP0535N3 |
200 mA, 350 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
P-Channel Enhancement-Mode Vertical DMOS FETs
|
SUPERTEX INC
Supertex, Inc
|
| 2N7002BK |
60 V, 350 mA N-channel Trench MOSFET
|
Nexperia
|
| NX3008NBKW NX3008NBKW-15 |
30 V, 350 mA N-channel Trench MOSFET
|
NXP Semiconductors
|
| HGTP14N40F3VL |
19 A, 350 V, N-CHANNEL IGBT, TO-220AB
|
HARRIS SEMICONDUCTOR
|
| NGB8206ANT4G NGB8206NT4G NGB8206ANSL3G NGB8206N11 |
Ignition IGBT 20 A, 350 V, N.Channel D2PAK
|
ON Semiconductor
|
| SI1013R-T1-GE3 |
350 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
VISHAY SILICONIX
|
| RA03M3540MD RA03M3540MD10 RA03M3540MD-101 |
RoHS Compliance , 350-400MHz 38dBm 7.2V, 2 Stage Amp. For PORTABLE RADIO
350 MHz - 400 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
|
Mitsubishi Electric Semiconductor
|
| TP2535N3-G |
86 mA, 350 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 GREEN, TO-92(N3), 3 PIN
|
Supertex, Inc.
|
| MGB15N35CL MGP15N35CL06 MGP15N35CL MGB15N35CLT4 |
Ignition IGBT 15 Amps, 350 Volts N-Channel TO-220 and D2PAK
|
ONSEMI[ON Semiconductor]
|
| MJ10000 |
20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 350 VOLTS 175 WATTS 20 A, 350 V, NPN, Si, POWER TRANSISTOR, TO-204AA
|
Motorola Mobility Holdings, Inc.
Motorola Inc
MOTOROLA[Motorola Inc]
|
| IRF451 IRF541 RF343 IRF351 IRF433 IRF712 |
13 A, 450 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204
27 A, 60 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
8 A, 350 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204
15 A, 350 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204
4 A, 450 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204
1.3 A, 400 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
|
VISHAY SILICONIX
|
|
